| 摘要 |
<p>PURPOSE: To facilitate the formation of a ferroelectric film and enable the enhancement of the degree of freedom in the capacitance ratio of ferroelectric capacitors and a gate oxide film, by including second transistors that operatively connect one side of electrodes and bit line according to the applied voltage to a gate electrode. CONSTITUTION: Driver transistors DT11, DT12, DT21, DT22, which control the current passing through bit lines in the direction of the polarization of a ferroelectric, are connected with one side of electrodes of ferroelectric capacitors FC11, FC12, FC21, FC22 so that their source electrode will be the same. Write transistors WT11, WT12, WT21, WT22 switch the conduction to bit lines B11, BL2. The title ferroelectric memory is composed of those four elements. When the driver transistors DT are separated from the ferroelectric capacitors FC, the transistors can be formed in the same process as ordinary CMOS processes. The lower electrodes 17 of the ferroelectric capacitors FC can be optimized independently of the transistors so that an excellent ferroelectric film 18 will be formed.</p> |
