| 摘要 |
<p>PURPOSE: To obtain a flash memory so improved that both performance and reliability will be ensured even at a Vcc of 3.3V or below. CONSTITUTION: A memory cell 6 include a Vcc transistor 7 and a Vpp transistor 8. The memory cell contains a tunnel oxide film 2, a floating gate 3 and a control gate 4. The Vcc transistor 7 contains a first gate insulating film 9 and a first gate 10. The Vpp transistor 8 contains a second gate insulating film 11 and a second gate 12. Letting the thicknesses of the tunnel oxide film, the first gate insulating film and the second gate insulating film be t(TN), t(Vcc) and t(Vpp), respectively, those are so controlled that the following inequality will be satisfied: t(Vcc)<t(TN)<t(Vpp).</p> |
