| 摘要 |
PURPOSE: To reduce leakage currents in a semiconductor device to improve the output of the device by forming an n-type current block layer containing a specific amount of Se as an impurity and p-type current block layer so that the n-type block layer cannot come into contact with an n-type clad layer. CONSTITUTION: On a surface of a p-type InP substrate 1, a mesa stripe is formed and a p-type InP buffer layer 2, an InGaAs active layer 3, and an n-type InP clad layer 4 are formed. In addition, n-type InP buried layers 5 and n-type current block layers 6 are also formed. The current block layers 6 contain Se as an impurity at the concentration of about 8×10<17> cm<-3> . Then p-type InP clad layers 7 are separately formed on the layers 6 so that the layers 7 cannot come into contact with the layers 6. Then an n-type InP clad layer 8, n-type InGaAs contact layer 9, and n-type electrode 10 are formed.
|
