| 摘要 |
PURPOSE: To obtain a highly reliable device having a high dielectric constant thin film capacitor at high yield by selectively etching a noble metallic thin film used as an electrode or a wiring layer by using a specified mask material by using etchant containing at least halogen only, salt halide and inducing solvent. CONSTITUTION: After performing RF sputtering for a Pt film 242, a dielectric film 243 and a W film 244 continuously, a photoresist film 51 is formed by photolithography and an upper electrode of the W film 244 is formed by RIE method wherein CF4 is used. Then, a dielectric film 243 is formed of H2 O2 , NH4 OH, EDTA mixture water solution by using the upper electrode as a mask layer and then a Pt film 242 which becomes a lower electrode is etched by 60 deg.C mixture solution of iodine, cetylpyridinium iodide and benzene and a capacitor cell is readily formed on an n<+> source region 231. A noble metallic thin film can be used as a wiring metal by adopting the noble metal etching method and high integration and rapid operation of an integrated circuit become possible. |
