| 摘要 |
<p>PURPOSE: To provide a wiring material which has an extremely low electric resistance and is free from such defects as hillocks, pinholes, etc., even when the material is heated to a high temperature and with which a solid oxide film can be formed by using the anodic oxidation method. CONSTITUTION: An alloy having a composition expressed by Alx (My N1-y )1-x , where M and N respectively represent at least one element selected from the group of rare-earth elements and at least one element selected from among Nb, Zr, and Ta and (x) and (y) respectively represent 98-99.5at.% and 0.1-0.9at.%, is used as a wiring material so that, when the alloy is heat-treated, an intermetallic compound of Al and the element represented by N or M can deposit in the matrix. The purpose can be accomplished even when an alloy to which Nb is added at a rate of 0.5-2.0at.% against Al is used. It is preferable to control the heat-treating temperature within the range of 250-450 deg.C.</p> |
