| 摘要 |
PURPOSE: To provide a semiconductor device with required breakdown strength, excellent high-frequency characteristics and high current drive capacity by a method wherein a gate electrode not exceeding the specified value of the gate length and a gate sidewall film exceeding the specified value of the width as well as the first and second diffused layers respectively containing the limited concentration and high concentration impurities are provided beneath the gate electrode and the gate sidewall film. CONSTITUTION: Within the semiconductor device, an element separating regions 2, a gate insulating film 3 and a gate electrode 4 are formed on a semiconductor silicon substrate 1, low concentration impurity regions 5a, 5b are formed by ion implantation using the gate electrode 4 as a mask and then ion implanted using a sidewall 6 as a mask to form a drain region 7a, a source region 7b. At this time, the impurity concentration of the low concentration impurity regions 5a, 5b is specified not to exceed 1×10<19> (atoms/cm<3> ) the junction depth Xz not to exceed 30nm, the width of the gate sidewal 6 to exceed 50nm and the gate length Lg not to exceed 0.35μm. Through these procedures, required breakdown strength and excellent high-frequency characteristics and the current drive capacity as high as possible can be secured.
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