| 摘要 |
PURPOSE: To provide the storage system of a new static memory cell using a quantum element and the structure of the memory cell. CONSTITUTION: A static memory cell has at least three conducting layers 20a to 20c, which are separated from each other with insulating layers 10 among them, a first potential imparting means 24 for imparting a prescribed potential difference between the layers 20a and 20c, through which a tunneling current is not made to flow directly to each other, out of these layers 20a to 20c, and a second potential imparting means 25 connected with the layer 20b, through which the tunneling current can be made to flow between the layers 20a and 20c. A quantum mechanical confinement of free electrons is made to these layers 20a to 20c. In this way, the static memory cell has a structure simpler than that of a static memory cell which is presently used, and the area of the static memory cell is equal with that of a DRAM cell. Moreover, since the circuit of the memory cell is constituted complementarily, a stand-by current in the circuit is reduced markedly. |
