| 摘要 |
FIELD: semiconductor engineering; manufacture of coordinate-sensing photodetector multiscan used for measuring light signal position. SUBSTANCE: method involves formation of two base regions insulated from each other and from substrate, production of strip of differentially connected p-n junctions in mentioned base regions, formation of common bus along external edge of one base region, and evaporation of separation layer on external edge of other base region. Novelty is that separation layer surface is coated, in addition, with resistive layer jutting beyond separation layer on its external side relative to p-n junctions side by at least ΔM,, where ΔM= Δm•f/f, layer resistance being K times higher than separation layer resistance, where K=Δm/M•f,; then coordination error function f(x) is determined by measuring output voltage as function of position of light spot center, maximum coordination error fis found, separation layer resistance is corrected by varying width of additional resistive layer on its external side relative to p-n junction according to equation m(x)=M[1+R/R•(f(x)-F)],, where m(x) is corrected distribution of additional resistive layer width, mcm; Ris additional resistive layer resistance, Ohm; Ris separation layer resistance, Ohm; Δm is minimal desired value of separation layer width variation, mcm; f(x) is coordination error as function of light spot center position, %; fis maximum of measured coordination error, %; fis maximum possible desired coordination error, %; fis desired coordination error, %; M is width of additional resistive layer, mcm; D is width of separation layer, mcm. EFFECT: improved measurement accuracy due to linearization of multiscan coordinate characteristic. |
