发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PHOTOMASK FOR MANUFACTURING THE DEVICE
摘要 PURPOSE: To provide a semiconductor device manufacturing method by which the degradation of precision owing to thermal contraction of the substrate is prevented and hence a superior semiconductor device in characteristics is manufactured and to provide a photomask for manufacturing the device. CONSTITUTION: The magnification of a pattern 4a of the photomask 5a for forming an active region 11 is different from that of patterns 4b, 4c of the photomasks 5b, 5c for forming a gate electrode 12 and making a contact hole. Through the step a pattern can be formed according to thermal contraction of a substrate 10 caused at a forming step of a pattern insulating film 14.
申请公布号 JPH08250401(A) 申请公布日期 1996.09.27
申请号 JP19950054734 申请日期 1995.03.14
申请人 SHARP CORP 发明人 KUBOTA YASUSHI;KATO KENICHI;SAKAI TAMOTSU
分类号 G03F1/00;G03F1/68;H01L21/027 主分类号 G03F1/00
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