发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PHOTOMASK FOR MANUFACTURING THE DEVICE |
摘要 |
PURPOSE: To provide a semiconductor device manufacturing method by which the degradation of precision owing to thermal contraction of the substrate is prevented and hence a superior semiconductor device in characteristics is manufactured and to provide a photomask for manufacturing the device. CONSTITUTION: The magnification of a pattern 4a of the photomask 5a for forming an active region 11 is different from that of patterns 4b, 4c of the photomasks 5b, 5c for forming a gate electrode 12 and making a contact hole. Through the step a pattern can be formed according to thermal contraction of a substrate 10 caused at a forming step of a pattern insulating film 14. |
申请公布号 |
JPH08250401(A) |
申请公布日期 |
1996.09.27 |
申请号 |
JP19950054734 |
申请日期 |
1995.03.14 |
申请人 |
SHARP CORP |
发明人 |
KUBOTA YASUSHI;KATO KENICHI;SAKAI TAMOTSU |
分类号 |
G03F1/00;G03F1/68;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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