| 摘要 |
PURPOSE: To obtain a semiconductor acceleration detector for detecting the acceleration in two orthogonal directions. CONSTITUTION: An acceleration detecting beam 8 is provided, on the rear surface in the thickness direction, with a diaphragm 9 which is made thin in the direction of Z-axis (breadthwise direction of the acceleration detecting beam 8) by etching, for example, so that the beam 8 can bend easily in the direction of Z-axis. On the rear surface of the diaphragm 9, gauge resistors R1a-R4a are formed on the base 4 side and gauge resistors R1b-R4b are formed on the forward end side of the acceleration detecting beam 8. With such structure, acceleration can be detected in two orthogonal directions while decreasing the required number of semiconductor acceleration detectors. |
