| 摘要 |
FIELD: optoelectronics; optical data processing systems, integrated optics, instrumentation engineering, fiber-optic communication systems. SUBSTANCE: device has two semiconductor structures placed in tandem between three polarizers and made on the basis of electrooptic crystal in the form of smooth variable-band heterostructure with p-n junction, two bias-voltage supplies, and also control and communicating light sources optically coupled with one of electrodes and with crystal plane; novelty is that mentioned structure has antireflecting coating on external surface of narrow-band region, and guard ring and electrodes are provided over its perimeter; shallow asymmetric p-n junction is made in its narrow-band region whose p-layer is combination of p-layer that functions as electrode and low-resistance p-layer and whose n-layer is of low resistance; wide-band region incorporates high-resistance n-layer and low-resistance nlayer that functional as electrode; each control-light source is optically coupled with narrow-band region of one of structures and handle light flux is optically coupled with high-resistance wide-band region of both structures. EFFECT: improved speed of response and modulation percentage in executing logic operations. |
