| 摘要 |
<p>PURPOSE: To obtain the semiconductor device having a bump electrode by providing a protruding electrode on the side surface of a conductor chip mounted on the recess part of a mounting substrate, connecting the electrode to a wiring layer with the mounting substrate, and thereby suppressing the thickness of the semiconductor device itself. CONSTITUTION: A metal wiring layer 4, which is formed in the inside of a chip, is exposed to the side surface of a semiconductor chip 1. The metal wiring layer 4 is made to be the electrode, and a bump electrode 3 is formed on this electrode. The semiconductor, chip 1 having the bump electrode 3 is attached at the recess part of a substrate wiring layer 10 formed on a mounting substrate 9. The bump electrode 3 on the semiconductor chip 1 and the substrate wiring layer 10 are connected. For the connection of the bump electrode 3 and the substrate wiring layer 10, a solder 11 is used, but adhesive agent such as conductive resin can be used. After the connection, the recess part of the mounting substrate 9 is sealed with a resin 12, and the semiconductor device is completed. Thus, the semiconductor device can be realized at the thickness close to the thickness of the mounting substrate itself.</p> |
