| 摘要 |
PURPOSE: To provide a semiconductor optical device which has such a structure that no damage may be given to a crystal growth layer at the time of wire bonding. CONSTITUTION: It is found that in a nitride compound semiconductor light emitting device 100, a semiconductor layer has been damaged at the time of wire bonding because a sapphire substrate 1 is made of rigid material. Concerning the light emitting device 100 of such a structure, a bonding region is opaque and has nothing to do with light emission and therefore the only requirement for the structure of the device is that electric conduction should be assured. Because of that reason, an electric pad for wire bonding 10 is made thick to eliminate damages to be done to a lower semiconductor layer at the time of pressure bonding. The electric pad 10 is made of metal and can plastic-deform and thereby lessen a shock and as a result, prevents damages from being given to the lower semiconductor layer. Since the semiconductor device has the thick- structured electric pad 10, damages are not given to the lower semiconductor layer at the time of pressure bonding and as a result, the semiconductor device can increase its durability. |
