| 摘要 |
PURPOSE: To enable individual input/output characteristics to be easily adjusted after the manufacture of a semiconductor device in the dual diffusion structure having a gate electrode. CONSTITUTION: Within the semiconductor device, a p-type channel well 13 is provided on the surface of an n-type substrate 11, an N<+> type source region 15 is provided in this channel well 13. Furthermore, a gate electrode 18 is provided on this channel well 13 through the intermediary of a gate oxide film 17 wherein a floating gate electrode 19 in the potentially floating state is provided on the position corresponding to a partial region of the channel well 13 on the side in contact with the source region 15. |
