| 摘要 |
PROBLEM TO BE SOLVED: To easily manufacture a semiconductor device by providing a gap that is filled with air or a gas for reducing a capacitance being generated between conductors, for example, by partially eliminating a dielectric around a conductor through a plurality of openings formed on a passivation layer by etching. SOLUTION: A semiconductor device is finished to a level, where a contact part and/or conductor path 2 that are electrically and mutually insulated by a dielectric is provided, and the upper surface of the device is covered with a passivation layer 6 for selectively eliminating the dielectric. Then, an opening 7 is formed so that it is sufficiently large and is in multiples with respect to a next process and is sufficiently small for the next process. Then, a dielectric around a contact part and/or conductor path 2 is selectively eliminated by etching partially through an opening 7 for forming a cavity 9. Then, the opening 7 is closed by depositing at least another passivation layer 8 without filling the cavity 9. |
