| 摘要 |
FIELD: microelectronics; production of very-large-scale integrated systems with superlow power requirement around CMOS structures. SUBSTANCE: circuit has multiemitter n-p-n transistor, switching n-p-n transistor whose emitter is connected to common bus and collector functions as output of gate whose inputs are emitters of multiemitter n-p-n transistor and whose collector is connected to base of switching n-p-n transistor base; it also has first and second p-n-p transistors; collector of first one is connected to base of multiemitter n-p-n transistor, collector of second p-n-p transistor is connected to base of switching n-p-n transistor, power electrode is connected to emitters of first and second p-n-p transistors, bases of first and second p-n-p transistors are combined and connected to collector of switching n-p-n transistor. Complement bipolar NAND circuits are functionally integrated and make it possible to produce combined bipolar CMOS circuits on single chip. EFFECT: reduced power requirement, facilitated manufacture, improved parameters of integrated circuits, and reduced cost of microelectronic devices. |
