| 摘要 |
PURPOSE: To provide a mask pattern correction method and a correction device for executing the correction method by which the mask pattern can automatically be corrected so as to obtain an actual resist pattern close to a design pattern. CONSTITUTION: A correction method is formed of an evaluation score arrangement process in which plural evaluation scores 30 are arranged along the pattern periphery of a required design pattern 32, a simulation process in which, using the photomask of the pattern 32 to which evaluation scores 30 are given, a transfer image which is obtained when exposure is conducted under a predetermined transfer condition is simulated, a comparison process in which differences between a simulated transfer image 34 and the design pattern 32 are compared per respective evaluation scores 30, and a transformation process in which, depending on the compared differences per respective scores 30, the design pattern 32 is transformed so that the differences become small. |
