| 摘要 |
<p>PURPOSE: To surely suck leaked gas through a cylindrical body even if the gas leaks from near a connector by providing a bellows-shaped cylindrical body to cover a tubular body, and making negative pressure act on the cylindrical body in the gas introduction pipe of an ion-implantation device used in the manufacturing process of a semiconductor. CONSTITUTION: An ion-implantation device introduces gas selectively supplied from a gas box 3 through a gas introduction pipe 1 to an ion source 4, and after ionizing the gas, injects it into a target wafer arranged in a target chamber. The tubular body 21 of the gas introduction pipe 1 is detachably connected to the ion source 4 through a connector 22, but in this case, the tubular body 21 is set up so that it may be covered by a tubular body 23 extended to near the connector 22 for maintaining the inside of the tubular body 23 in a negative state through an exhaust pipe and an exhaust duct on the side of the ion source 4. Thus in the case where the attaching and detaching of the connector 22 are repeated to cause the deterioration of an O-ring, the gas leaked from near the connector 22 can be surely aspirate and exhausted.</p> |
