发明名称 Circuit de redondance de mémoire.
摘要 The circuit includes a content addressable memory (CAM) storing addresses of faulty elements in a principal memory (MP). In use, incoming addresses (ADD) are compared with defective addresses stored in the content addressable memory (CAM) and where identical they are readdressed to a redundant memory (MR). Where the principal memory (MP) has no defects time may be saved by using an inhibiting circuit (IN). If the inhibiting circuit (IN) emits a validating signal (VAL) operation is normal but an inhibiting signal (INH) prevents comparison of addresses and all addresses proceed to the principal memory (MP).
申请公布号 FR2716743(B1) 申请公布日期 1996.09.27
申请号 FR19940002282 申请日期 1994.02.28
申请人 SGS THOMSON MICROELECTRONICS SA 发明人 DEVIN JEAN
分类号 G11C29/00;G11C29/04;G11C29/24;(IPC1-7):G11C29/00;G11C15/04 主分类号 G11C29/00
代理机构 代理人
主权项
地址