发明名称 MICRO SEMICONDUCTOR RESONATOR ELEMENT AND METHOD FOR DRY-ETCHING MULTILAYERED COMPOUND SEMICONDUCTOR FILM
摘要 PURPOSE: To prevent the increase of the optical loss when the size of a resonator is reduced by surrounding the side face of a columnar structure with a semiconductor thin film and setting the saturation gain and thickness of an active layer, effective reflectivity of a multilayer reflection film surrounded by the semiconductor thin film, etc., so that they can satisfy a specific relation. CONSTITUTION: A micro semiconductor resonator element 10 is constituted by successively forming a Bragg reflection film (upper DBR) 3 having n-type GaAs/AlAs distribution, active layer 4, spacer layers 5a and 5b, a Brag reflection layer (lower DBR) 2 having p-type GaAs/AlAs distribution on an n-type GaAs substrate 7. The active layer 4 is composed of an i-type InGaAs strained quantum well active layer and i-type GaAs barrier layer. The saturation gain gs of the active layer 4 is set so that the gain gs can meet the inequality I, where ta and R' respectively represent the thickness of the active layer 4 and effective reflectivity of a multilayered reflection film surrounded by a semiconductor thin film. The reflectivity R' is set so that the reflectivity R' can meet the equation II, where Rtop and Rbottom respectively represent the reflectivity of the upper DBR and that of the lower DBR.
申请公布号 JPH08250817(A) 申请公布日期 1996.09.27
申请号 JP19950054766 申请日期 1995.03.14
申请人 TOSHIBA CORP 发明人 TEZUKA TSUTOMU;NUNOGAMI SHINYA
分类号 H01L21/302;H01L21/3065;H01L33/06;H01L33/14;H01L33/30;H01L33/46;H01S5/00;H01S5/183 主分类号 H01L21/302
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