发明名称 HIGH FREQUENCY CIRCUIT DEVICE
摘要 PURPOSE: To make a high frequency circuit device small without losing the performance of the high frequency circuit device. CONSTITUTION: Porous thin film layers 3, 4, 5, 6 are formed on a porous board 2. An IC T is mounted and a micro strip line 8 and a DC line 9 are formed on the surface of the porous thin film layer 6. A ground metallic layer is formed between the porous thin film layers 6, 5 and the porous thin film layers 2, 3. Furthermore, the strip line and the DC line are formed at a prescribed position between the porous thin film layers 4, 5 and between the porous thin film layers 2, 3.
申请公布号 JPH08250908(A) 申请公布日期 1996.09.27
申请号 JP19950047155 申请日期 1995.03.07
申请人 SUMITOMO ELECTRIC IND LTD 发明人 GOTO TOMOJI;YAMANAKA SEISAKU
分类号 H05K1/03;H01P3/08;H05K1/00;H05K1/02;H05K3/46 主分类号 H05K1/03
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