| 摘要 |
<p>The invention relates to a semiconductor device of the type sealed in glass, comprising a semiconductor body (1) having a pn-junction (2) between opposing faces (3, 4), which are connected to slugs (5) of a transition metal, said slugs (5) being connected to copper-containing connection conductors (8) by means of a silver- and copper-containing bonding layer (10), at least the semiconductor body (1) and a part of the slugs (5) being covered with the glass (12). In accordance with the invention, the bonding layer (10) comprises, in addition to copper and silver, more than 1 wt.% germanium. By virtue thereof, a sufficiently great tensile strength of the connection between the slugs (5) and the connection wires (8) is achieved.</p> |
