发明名称 |
HIGH GROWTH RATE HOMOEPITAXIAL DIAMOND FILM DEPOSITION AT HIGH TEMPERATURES BY MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION |
摘要 |
The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 mu m/hr for high quality films, as compared to rates of less than 5 mu m/hr generally reported for MPCVD processes. |
申请公布号 |
WO9629441(A2) |
申请公布日期 |
1996.09.26 |
申请号 |
WO1996US03391 |
申请日期 |
1996.03.13 |
申请人 |
UAB RESEARCH FOUNDATION |
发明人 |
VOHRA, YOGESH, K.;MCCAULEY, THOMAS, S. |
分类号 |
C23C16/27;C30B25/10 |
主分类号 |
C23C16/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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