SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

摘要

A semiconductor integrated circuit device having a capacitor-over-bit-line structure in which the capacitors (8) of the memory cells of the memory cell array (2) of a DRAM arranged on a semiconductor substrate (10) are provided over bit lines (2BL). The capacitance insulating film (8b) of each capacitor (8) and the gate insulating film (20c) of a MOSFET (20) for forming a peripheral circuit are ferroelectric films made of barium titanate. The capacitance insulating film (8b) and the upper electrode (8c) of the capacitor (8), and the gate insulating film (20c) and the gate electrode (20d) of the MOSFET (20) in a peripheral circuit region (9) are simultaneously patterned. Therefore, a semiconductor integrated circuit device having a high performance and a reliability can be manufactured without any complicated manufacturing steps.