Epitaxial structure for light-emitting gallium-phosphide diode

摘要

The structure includes an n-type GaP single crystal substrate, several epitaxially grown on the substrate, and an active GaP layer. Each of the epitaxially grown layers has a lower etching-depth density than the monocrystalline substrate to provided a buffer layer about it. The etching depth density decreases towards the upper layer, but the carrier concentration depth increases towards the top of each layer. There is an active GaP-layer grown on the upper surface of the top buffer layer.