| 发明名称 |
Growth of silicon single crystal |
| 摘要 |
<p>When a single crystal is pulled up from a melt, the difference DELTA T between temperatures at the bottom of a crucible and at the interface of crystal growth is controlled so as to hold Rayleigh constant defined by the formula of: <MATH> within the range of 5 x 10<5> -4 x 10<7>, wherein g represents the acceleration of gravity, beta the volumetric expansion coefficient of the melt, L the depth of the melt, kappa thermal diffusivity and nu the kinematic viscosity. Since the convection mode of the melt at the interface of crystal growth is contantly held in the region of soft turbulence, a single crystal is grown under the stabilized temperature condition without the transfer of impurity distribution in the melt into the growing single crystal. <IMAGE></p> |
| 申请公布号 |
EP0733725(A2) |
申请公布日期 |
1996.09.25 |
| 申请号 |
EP19960104453 |
申请日期 |
1996.03.20 |
| 申请人 |
SUMITOMO SITIX CORPORATION |
发明人 |
IZUNOME, KOJI;KAWANISHI, SOUROKU;TOGAWA, SHINJI;IKARI, ATSUSHI;SASAKI, HITOSHI;KIMURA, SHIGEYUKI |
| 分类号 |
C30B15/20;C30B15/00;C30B29/06;H01L21/208;(IPC1-7):C30B15/00;C30B15/22 |
主分类号 |
C30B15/20 |
| 代理机构 |
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| 主权项 |
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