Electric field absorption type semiconductor light modulator

摘要

An electric field absorption type semiconductor light modulator comprises an active layer having a multi quantum well structure in which a plurality of well layers and a plurality of barrier layers are formed sequentially, the peaks of the PL wavelengths of the plurality of well layers being set shorter than the wavelength of signal light by 0.1 mu m or more, thereby enhancing the linearity of the applied voltage - quenching ratio characteristic. In another embodiment, the plurality of well layers may be formed by the combination of well layers having different PL wavelengths (45,47). Consequently, it is possible to realize the combination of the well layer having the convex applied voltage - quenching ratio characteristic and the well layer having the concave applied voltage - quenching ratio characteristic.