发明名称 FAIL REPAIR METHOD AND CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE
摘要 The semiconductor memory device is for supplying a memory block selected in test mode with a source power voltage by comprising: a block free decoder outputting the decoding result of a block selecting signal from the external as a block selecting signal; a test pad inputting a test control signal applied from the external; and a block row decoder charging the power voltage line corresponding to the selected memory block to a source power voltage level by composing the test control signal and the block selecting signal.
申请公布号 KR960012793(B1) 申请公布日期 1996.09.24
申请号 KR19940000514 申请日期 1994.01.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYUN, HYUN - KEUN;HU, KOOK
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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