发明名称 |
FAIL REPAIR METHOD AND CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE |
摘要 |
The semiconductor memory device is for supplying a memory block selected in test mode with a source power voltage by comprising: a block free decoder outputting the decoding result of a block selecting signal from the external as a block selecting signal; a test pad inputting a test control signal applied from the external; and a block row decoder charging the power voltage line corresponding to the selected memory block to a source power voltage level by composing the test control signal and the block selecting signal.
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申请公布号 |
KR960012793(B1) |
申请公布日期 |
1996.09.24 |
申请号 |
KR19940000514 |
申请日期 |
1994.01.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BYUN, HYUN - KEUN;HU, KOOK |
分类号 |
G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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