| 摘要 |
PURPOSE: To provide an ITO target ensuring very low frequency of abnormal electric discharge during sputtering and not causing nodules even after use for a long time. CONSTITUTION: This oxide sintered compact consists essentially of indium, tin and oxygen and has a structure consisting of an In2 O3 phase, a metal tin phase and an intermediate compd. phase [(In0.6 Sn0.4 )2 O3 ] When this sintered compact is subjected to X-ray diffraction, the integral intensity of the diffraction peak of the intermediate compd. phase appearing at, 2θ=30.2 deg. is <=10% of that of the diffraction peak of the (222) face of the In2 O3 phase and the integral intensity of the diffraction peak of the (101) face of the metal tin phase is <=4% of that of the diffraction peak of the (222) face of the In2 O3 phase. Elemental tin may be allowed to enter into solid soln. in the In2 O3 phase by >=2wt.%. |
