| 摘要 |
Disclosed are an improved vertical-type double diffused MOSFET which has a self-aligned gate structure and field oxide film and a method of fabricating the same. A silicon nitride film is selectively formed and a well region is formed, after which a self-aligned field oxide film is formed on the well region. After removing the silicon nitride film, a self-aligned gate oxide film is formed on an element formation area opposite to the well region. The self-aligned field oxide film overlays the well region. A gate structure has a stable low resistance caused by a desirable definition thereof. While, the self-aligned gate oxide film overlays the element formation area, but which has no overlaying area on the well region and the edge portion of the gate oxide film exists in the vicinity of the edge portion of the well region. The gate oxide film has a few crystal defects thereby reducing the gate short.
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