| 摘要 |
A ball bump is formed on a semiconductor die (12) by lowering a capillary (18) and a conductive wire (20) having a ball (30) formed at its end toward the die. The ball is pressed against a bond pad (14) of the die to form a ball bond (32). The capillary is then raised and horizontally displaced without breaking the wire. The capillary is then lowered such that one side of a bottom face (22) of the capillary is used to flatten the ball bond to form a flattened ball bump (38). In lowering the capillary, an entire width (W) of the bottom face lies over and is in contact with the entire top surface of the ball bump, and a chamfer (26) and feed hole (24) are located at or beyond a perimeter of the ball bump. The wire is then clamped and the capillary raised to break the wire from the ball bump.
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