发明名称 |
Ferroelectrische condensator. |
摘要 |
A ferroelectric capacitor used as a memory cell in a ferroelectric random access memory (FRAM) is provided. The ferroelectric capacitor includes a substrate, an insulating layer formed on the substrate, a Rh lower electrode provided on the insulating layer, an adhesive layer between the insulating layer and the lower electrode, a ferroelectric layer provided on the lower electrode, and a Rh upper electrode provided on the ferroelectric layer. The Rh used as the electrode material is not affected by diffusion of Si due to its fine structure when compared to a Pt electrode, and has excellent electrical properties due to better electrical conductivity and good heat-transfer properties. |
申请公布号 |
NL1002665(A1) |
申请公布日期 |
1996.09.24 |
申请号 |
NL19961002665 |
申请日期 |
1996.03.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNE-KEY LEE;IL-SUB CHUNG;SESHU BABU DESU |
分类号 |
H01L29/92;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L29/788;H01L29/792 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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