| 发明名称 |
IMPLANTATION OF IONS INTO A METAL ELECTRODE |
| 摘要 |
<p>Non-doping ions are implanted in the electrode layer of a semiconductor to reduce contamination of the electrode layer by mobile ions. The dosage of the ions is selected to prevent an increase in the fast surface state density when the ions are implanted. The energy level at which the ions are implanted is controlled to position all of the implanted ions within the electrode layer.</p> |
| 申请公布号 |
CA1032658(A) |
申请公布日期 |
1978.06.06 |
| 申请号 |
CA19740201600 |
申请日期 |
1974.06.04 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KU, SAN-MEI;PILLUS, CHARLES A. |
| 分类号 |
H01L29/78;H01L21/265;H01L21/28;H01L21/3105;H01L21/322;H01L21/336;H01L23/522;H01L23/532;(IPC1-7):01L21/265 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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