发明名称 Hydrogen@ storage alloy anode for sec. cell
摘要 A hydrogen storage alloy anode for a sec. cell has its surface coated with a C substance at 0.05 - 0.5 mg / cm<2>, is produced from an alloy of the AB2 series and is in the form of a plate. Also claimed is a process for producing the above anode, comprising: (a) forming a H storage alloy of the AB2 series by dissolving V, Ti, Zr, Ni, Co and Mn; (b) heat treating the alloy at 900 - 1100 deg C for 4 - 6 hrs.; (c) homogeneously pulverising the alloy; (d) forming an anode plate by coating and pressing the alloy powder onto a substrate; (e) sintering the anode plate; and (f) coating the surface of the anode plate with a carbon substance. The sec. cell contg. the above anode mfd. by the above process is further claimed.
申请公布号 DE19610523(A1) 申请公布日期 1996.09.19
申请号 DE1996110523 申请日期 1996.03.18
申请人 SAMSUNG DISPLAY DEVICES CO., LTD., SUWON, KYUNGKI, KR 发明人 PAIK, MEEN-SEON, SEOUL/SOUL, KR;HAN, KYENG-HO, SUWON, KYUNGKI, KR
分类号 H01M4/24;H01M4/26;H01M4/38 主分类号 H01M4/24
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