Correcting photo-mask patterns for use in photolithography for semiconductor mfr.

摘要

The method involves deforming the mask pattern of a photomask to be used in a photolithographic step. The mask is deformed such that a transfer image is kept near to a desired design pattern. The method includes an analysis point arrangement step to arrange several analysis points (30) along an outer edge of the desired design pattern (32). In a simulation step, the transfer image to be formed is simulated. Under predetermined transfer conditions, irradiation results using a photomask of the design pattern which would be provided with the analysis points. In a comparison step, a difference between the simulated transfer image and the design pattern for each analysis point is compared. In a deformation step, the design pattern is deformed in accordance with the compared difference for each analysis point, so that the difference is smaller.