Current controlling semiconductor device

摘要

The semiconductor device has a zone of a first conduction type including a channel zone with low concentration of dissociation centres. Current input and output electrodes are connected to the channel ends; and a control electrode near the channel applies to it a control voltage generating a depletion layer and defining the current channel in the channel zone.The channel zone has such a width and concentration of dissociation centres, that when a forward control voltage is applied, the channel is pinched off producing a potential barrier in the channel zone for charge carriers moving from the electrodes during the transistor main operating state. The height of the barrier is capacitively controlled by the voltage applied to the drain