发明名称 LOW-EMI DEVICE CIRCUIT AND ITS STRUCTURE
摘要 <p>A low-EMI device in which components are mounted at a high density and unnecessary radiation is effectively suppressed by converting the potential fluctuation at the power supply pad with respect to ghe ground pad which occurs on switching an LSI element, etc., into Joule's heat without using any parts used as the measure against EMI. An element is formed on the surface of the LSI device by using a thin film processing. To a first by-pass capacitor (C1) connected to the power supply and ground pads, parallely connected is a circuit in which a second by-pass capacitor (C2) and a resistor (R) are connected in series. Consequently the impedance of the capacitor (C2) is sufficiently smaller than that of the resistor (R). The dc component of the Q-factor of the by-pass capacitor circuit is cut when viewed from between the power supply and ground pads, and the Q-factor with respect to the ac (high-frequency) component is low (below 10), so that the potential fluctuation between the pads is absorbed. Thus the electromagnetic radiation from the LSI device itself and wires connected to the LSI device is remarkably suppressed.</p>
申请公布号 WO1996028848(P1) 申请公布日期 1996.09.19
申请号 JP1995000431 申请日期 1995.03.15
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