Semiconductor circuit comprising means for malfunction prevention, and its use, particularly for inverters

摘要

The present invention relates to a semiconductor circuit for the prevention of malfunctions caused by transient voltages (dV/dt) for IGBT and MOSFET devices. A MOSFET (2) for a gate short-circuit is provided between collector (C) and emitter (E) of the IGBT (1) and a capacitor (3) is connected between the gate of the MOSFET (2) and the collector (C) of the IGBT. Thereby, malfunction is prevented by turning on the MOSFET (2) for gate short-circuit and providing a short-circuit of the gate of the IGBT (1) when a transient voltage (dV/dt) arises. The invention leads to a reduction of the power consumption and a reduction of the chip area which is particularly advantageous in the case of monolithic devices.