| 摘要 |
<p>A composite semiconductor substrate with semiconductor elements bonded together at their bonding surfaces in which the interface of the bonded semiconductor elements contains no void. The substrate contains a first semiconductor element whose main surface serves as a first bonding surface and a second semiconductor element whose main surface serves as a second bonding surface. An insulating layer is selectively formed in a portion of the first bonding surface. The insulating layer recedes from the first bonding surface to be buried in the first semiconductor element. The first bonding surface is directly bonded to the second bonding surface except for the portion of the first bonding surface and a corresponding portion of the second bonding surface, thereby combining the first semiconductor element and the second semiconductor element with each other. The first semiconductor element is used for a semiconductor active layer where semiconductor devices are provided. A cavity is preferably generated between the insulating layer and the corresponding portion of the second bonding surface. <IMAGE></p> |
