MOS-DEPLETION TYPE CUT-OFF TRANSISTOR

摘要

forming an insulating film(37) on a semiconductor substrate(38); forming a doping silicon bar(31) for conduction on the insulating film(37); forming a gate oxide film(34) on the silicon bar(31); forming a wordline gate electrode(35) in order to reduce the difference between surfaces of the silicon bar and etching region; forming a source/drain region of cell evaporating and patterning a polysilicon film on an upper layer of whole structure; performing an injection of ion which is the same type as the silicon bar(31) in order to perform ROM coding on the cell using a ROM coding masking(39).