Method of forming a doped region in a substrate and use in the fabrication of a bipolar transistor

摘要

A doped region (14) is produced in a substrate (11) of silicon by diffusion of dopant from a doped glass layer (13) that is arranged on an intermediate layer (12) situated on the substrate (11) . The dopant concentration in the doped region (14) is thereby limited by the intermediate layer (12). The doped glass layer (13) is particularly produced by chemical vapor deposition of (B(OSi(CH3)3)3).