| 摘要 |
PURPOSE: To enable the loading of a semiconductor element in a stable state without deteriorating the heat radiating properties of a substrate by forming a metallized layer and a plating layer on the surface of an aluminum nitride plate and forming a metallized layer on the sides thereof. CONSTITUTION: This aluminum nitride substrate is obtained by forming a metallized layer 12 having a high-melting metallic component on the whole surface of an aluminum nitride plate 11 having <=20μm surface flatness degree, then carrying out the plating treatment, forming a plating layer 13 and subsequently cutting regions A where the metallized layer 12 and the plating layer 13 of the aluminum nitride plate 11 are not horizontal. In the resultant aluminum nitride substrate, the metallized layer 12 and the plating layer 13 are formed on the whole surface of the aluminum nitride plate 11 and the metallized layer 12 is exposed to the sides. Furthermore, the sides of both the metallized layer 12 and the plating layer 13 are present on the same plane.
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