| 摘要 |
Vulcanizable semiconductive shield compositions contain a linear, single-site catalyzed polymer formed by polymerizing ethylene with at least one comonomer selected from C3 to C20 alpha-olefins; a carbon black selected from furnace carbon blacks that contain ash and sulfur in amounts of 50 ppm or less and have crystal dimensions La and Lc of 30 ANGSTROM or less, acetylene carbon blacks, and furnace carbon blacks having an ASTM grade of N-351; and a crosslinking agent. The compositions may be used to manufacture semiconductive shields for electrical conductors, such as power cables. The semiconductive shields exhibit improved processability, low water vapor transmission and low shrinkback, without abrading or corroding extrusion equipment.
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