Semiconductor prodn. method using etched layers - obtaining silicon-oxide layer by thermal oxidation following ion implantation in non-oxidised layers

摘要

In the semiconductor device, an insulating layer is applied to the surface of part of the silicon substrate. The insulating layer is covered with a silicon layer etched into a pattern is then provided with a silicon oxide layer obtained by thermal oxidation. The silicon zone underneath the insulating layer remains unoxidised during the oxidation process. Ion implantation will take place through the insulating layer (4) after the pattern has been etched into the silicon layer (1) and before thermal oxidation takes place. The oxidation inhibiting ions will be on the surface of the silicon layer on both sides of the silicon pattern.