| 摘要 |
PURPOSE: To obtain a multilayered film having high heat resistance without considerably deteriorating magnetoresistance variation by forming a Co-noble metal alloy layer at the interface between each of two magnetic layers and a nonmagnetic layer. CONSTITUTION: A (100) single crystal substrate of Si is used as a substrate 11. An Hf layer of 5nm thickness is used as a buffer layer 12, Ni-19 atomic % Fe alloy layers of 4nm thickness are used as magnetic layers 13, 17 and Co-Pt alloy layers of 1nm thickness are used as magnetic layers 14, 16. A Cu layer of 2.5nm thickness is used as a nonmagnetic layer 15, an Fe-40 atomic % Mn alloy layer of 5nm thickness is used as an antiferromagnetic layer 18 and an Hf layer of 5nm thickness is used as a protective layer 19. A layer of an alloy of Co with <=25 atomic % noble metal selected from among Pt, Pd, Rh and Ir is formed at the interface between each of the magnetic layers 14, 16 and the nonmagnetic layer 15. The objective multilayered film having high heat resistance is obtd. without considerably deteriorating magnetoresistance variation. |
