发明名称 PRESSURE WELDING HOUSING OF SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a pressure-contact housing which ensures permanent and highly reliable electrical contact. SOLUTION: A pressure-contact housing for a semiconductor element is provided with a gate electrode contacting ring 4 which has spiral holes 5. The spiral holes 5 absorb movement in the axial direction during housing assembly without loading. Thus, an electrically contacting member exhibiting superior durability is obtained between the gate electrode and the gate electrode contacting ring.
申请公布号 JPH08241956(A) 申请公布日期 1996.09.17
申请号 JP19960020953 申请日期 1996.02.07
申请人 ABB MANAG AG 发明人 FUABIO BORUJIAANI
分类号 H01L29/74;H01L23/051;H01L23/48;H01L25/07;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L29/74
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