| 摘要 |
<p>PROBLEM TO BE SOLVED: To perform manufacture in which a base plate is not damaged by hydrogen plasma and high temperature by increasing a manufacturing speed, by previously activating superfine diamond grains before they are stuck to the device base plate. SOLUTION: An opening 128 is provided on a chamber 20, and diamond grains 10 and plasma gas are introduced through inflow pipes 11, 12. An opening part 29 is an outlet for them. A controller 13 selectively switches microwave sources 22, 23, 24. In the operation, the chamber 20 is placed in a container 21 having low pressure obtained by vacuum or atmospheric pressure, and grains and plasma gas are allowed to flow. The chamber 20 is heated to the desired temperature by emission or the other heating means. Plasma is started in the chamber 20 by operating the microwave sources 22, 23, 24. The movement and the flow of the grains are obtained by selectively switching the plasma ranges 26, 27, 28.</p> |
