VOLTAGE DRIVE CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress a leak current as much as possible by improving MOS transistor(TR) switching characteristics of a memory circuit at active time and suppressing a subthreshold current at stand-by time. SOLUTION: A voltage driving circuit can supply a circuit with proper voltages by operation states of a memory, i.e., an active and a stand-by state. This voltage driving circuit is constituted by connecting a switch circuit 13 to a 1st voltage generating circuit 11 and a 2nd voltage generating circuit 12. The switch circuit 13 supplies a 1st source voltage Vcc1 or 2nd source voltage Vcc2 selectively to the memory circuit 14 according to a mode control signalϕshowing the active mode and stand-by mode of the memory device by, for example, RAS. Here, Vcc2 is lower than Vcc1 which causes no hindrance to the operation of the memory circuit. Consequently, the threshold voltage of an MOS TR of the memory circuit 14 becomes substantially lower at the active time to improve the switching characteristics and becomes higher at the stand-by time to suppress a leak current.