发明名称 MEMORY CELL WITH SINGLE-LINE READ AND ITS OPERATING METHOD
摘要 PROBLEM TO BE SOLVED: To eliminate the need for a differential amplifier for reading data out by equalizing a bit line couple through a charge equalization switch right before data written in the memory cell are read out through the bit line pair. SOLUTION: The memory cell 10 having the single-line read-back function is built in a digital micromirror element(DMD) 40 which forms a spatial optical modulator. In this cell 10, desired data are written through a latch 14 and the bit lines 16 and 18 of the bit line pair. To read the data out of the cell 10, a control part 46 turns on the transistor 50 of the charge equalization switch to equalize the bit lines 16 and 18, the storage capacity of the cell 10 are stabilized, and the data are read out by using an ordinary amplifier, thereby eliminating the need for a differential amplifier which has large occupation area and is large in power consumption. Consequently, the memory cell with the single- line read-back function is obtained which is used suitably for a DMD type spatial optical modulator.
申请公布号 JPH08241595(A) 申请公布日期 1996.09.17
申请号 JP19950311112 申请日期 1995.11.29
申请人 TEXAS INSTR INC <TI> 发明人 JIEEMUZU ERU KONAA;ROHITSUTO ERU BUUBA;MAIKURU JIEI OOBAARAUAA
分类号 G02F1/01;G09G3/34;G11C11/413;G11C11/419;H01L21/8242;H01L27/10;H01L27/108 主分类号 G02F1/01
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