发明名称 |
Voltage programmable link having reduced capacitance |
摘要 |
A voltage programmable link structure reduces parasitic capacitance by using ion implantation. The voltage programmable link structure includes a first conductive element placed over a substrate. A transformable insulator is deposited over the first conductive element. The transformable insulator material is deposited with an ion implanted layer. A second conductive element is deposited over the ion implanted layer. An electrical path is formed between the first and second conductive elements by applying a voltage between the elements across at least one region of the insulator, such that the insulating material is transformed and rendered conductive to form an electrical signal path.
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申请公布号 |
US5557137(A) |
申请公布日期 |
1996.09.17 |
申请号 |
US19940210062 |
申请日期 |
1994.03.16 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
COHEN, SIMON S. |
分类号 |
H01L23/525;(IPC1-7):H01L29/00;G11C17/00 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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